期刊
ACS APPLIED ELECTRONIC MATERIALS
卷 4, 期 12, 页码 5867-5874出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c01041
关键词
InSe; In layer; surface charge transfer; near-infrared photodetectors
资金
- National Nature Science Foundation
- Natural Science Foundation of Jiangsu Province, China
- Na-tional Postdoctoral Foundation
- Post-doctoral Foundation of Jiangsu Province, China
- Fundamental Research Funds for the Central Universities of China
- Graduate Research Innovation Program of Jiangsu Province, China
- 111 Project
- Australian Research Council
- [62074070]
- [11704159]
- [BK20221065]
- [BK20170167]
- [2018M642154]
- [2018K057B]
- [JUSRP51726B]
- [KYCX19-1889]
- [B12018]
Surface functionalization with an In layer can greatly enhance the performance of an InSe phototransistor. After surface functionalization with a 20 nm thick In layer, the electron mobility in InSe increased by almost 59 times. Photodetectors based on In/InSe/h-BN showed an almost 3-fold increase in photoresponsivity and external quantum efficiency at 940 nm due to enhanced surface charge transfer.
Indium selenide (InSe) is considered an ideal two-dimensional material for infrared light detection owing to its high carrier mobility and narrow band gap. Here, we demonstrate a considerable enhancement in the performance of an InSe phototransistor via surface functionalization with an In layer. Electron mobility in InSe increased by almost 59 times after surface functionalization using a 20 nm thick In layer. Furthermore, compared with InSe/h-BN, In/InSe/h-BN-based photodetectors exhibited an almost 3-fold increase in photoresponsivity and external quantum efficiency at 940 nm owing to an enhancement of the surface charge transfer. First-principles calculation and Raman and photoluminescence spectroscopy analyses confirmed the occurrence of a considerable surface charge transfer at the In/InSe interface. The tunability of the surface transfer efficiency via doping establishes the potential of InSe for future use in optoelectronic devices based on two-dimensional materials.KEYWORDS: InSe, In layer, surface charge transfer, near-infrared photodetectors
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