期刊
PHYSICAL REVIEW B
卷 106, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.106.245425
关键词
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资金
- National Key R&D Pro-gram of China
- Strategic Priority Research Program of Chinese Academy of Sciences
- National Basic Research Pro-gram of China
- NSFC
- Priority Academic Program Develop-ment of Jiangsu Higher Education Institutions - China Postdoctoral Science Foundation
- [2022YFA1403700]
- [XDB28000000]
- [2015CB921102]
- [11921005]
- [12074108]
- [12147102]
- [BX20220005]
In this study, a new type of Hall effect called quantum anomalous layer Hall effect (QALHE) is observed in the even-layered two-dimensional antiferromagnetic MnBi2Te4. The quantized Hall conductance of QALHE can be controlled by a vertical electric field and can change sign with electric-field reversal in both the even-layered antiferromagnetic phase and the ferromagnetic phase. These findings offer a promising approach to electrically engineer Berry curvature monopoles and quantized-layered transport in topological magnets.
Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et al., Nature (London) 595, 521 (2021)]. In this paper, we report that the quantization of LHE, which we call the quantum anomalous layer Hall effect (QALHE), can be realized in MnBi2Te4. The QALHE originates from kicking a layer-locked Berry curvature monopole out of the Fermi sea by a vertical electric field. Remarkably, we demonstrate that electric-field reversal can switch the sign of the quantized Hall conductance of QALHE in the even-layered AFM phase. The QALHE can also be realized in the ferromagnetic phase. These results provide a promising way toward the electric engineering of Berry curvature monopoles and quantized-layered transport in topological magnets.
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