4.6 Article

Theory of shallow and deep boron defects in 4H-SiC

期刊

PHYSICAL REVIEW B
卷 106, 期 22, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.106.224112

关键词

-

资金

  1. NATO Science for Peace and Security Programme [G5674]
  2. FCT [LA/P/0037/2020, UIDB/50025/2020, UIDP/50025/2020]

向作者/读者索取更多资源

Despite the numerous boron-related experiments, there is still no model that can explain them. One puzzle is the observation of two shallow boron defects with distinct axial orientations, which are not found in materials doped with other group-III elements. Additionally, conflicting conclusions have been drawn from photoluminescence and EPR studies of a deeper boron center, which are associated with different models based on substitutional or vacancy-related boron defects. By using first-principles calculations, we address these and other issues.
Despite advances toward improving the quality of p-type 4H-SiC substrates and layers, we still have no model capable of accounting for the multitude of boron-related optical, junction, and paramagnetic resonance experiments available in the literature. A conspicuous puzzle is the observation of two shallow boron defects with rather distinct axial orientations as found by electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) data. This feature is not observed in material doped with other group-III elements. Another open issue involves conflicting conclusions from photoluminescence and EPR studies of a deeper boron center, which has been linked to rather distinct models, either based on substitutional or vacancy-related boron defects. We unlock these and other problems by means of first-principles calculations, where the temperature-dependent stability, the electronic activity, and the paramagnetic response of boron defects in 4H-SiC are investigated.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据