期刊
ADVANCED MATERIALS INTERFACES
卷 3, 期 16, 页码 -出版社
WILEY
DOI: 10.1002/admi.201600254
关键词
chemical vapor deposition; high-aspect-ratio feature; silicon carbides; sticking probability; test structures
资金
- Nanotechnology Platform, MEXT, Japan
- METI, Japan
- Grants for Excellent Graduate Schools, MEXT, Japan
- Japan Society for the Promotion of Science through the Program for Leading Graduate Schools (MERIT)
A method is proposed to fabricate a high-aspect-ratio (HAR) microchannel with a microscopic gap and AR of more than 1000:1 applicable to a test structure for kinetic analysis of chemical vapor deposition (CVD). It has a parallel-plate structure and is formed concisely by sticking a planar Si substrate and a patterned Si or silicon-on-insulator (SOI) substrate fabricated by single-step etching, by clamping them. The resulting feature exhibits a uniform gap and smooth surface morphology along its depth. When CVD is conducted into this HAR microchannel, the sticking probability () of film-forming species can be detected by analyzing the film thickness gradient. The use of a microchannel with an AR of 1000:1 enables the elucidation of values from 1 down to the order of 10(-7). A kinetic analysis of SiC-CVD from methyltrichlorosilane and H-2 is thus performed. It is found that conformal SiC-film growth occurred inside the HAR microchannel, where one of the film-forming species is revealed to have extremely low around 10(-6). The present study demonstrates that the developed HAR microchannel is a solution to access the overall reaction kinetics of CVDs, including film-forming species with extremely low .
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