期刊
ADVANCED MATERIALS INTERFACES
卷 3, 期 14, 页码 -出版社
WILEY
DOI: 10.1002/admi.201500799
关键词
chromium oxide; copper doping; hole-transporting layers; perovskite solar cells; stability
资金
- Special Postdoctoral Science Foundation of China [2014T70735]
- General Postdoctoral Science Foundation of China [2013M531737]
- Natural Science Foundation of Hubei Province [2014CFB275]
- National High Technology Research and Development Program [2015AA050601]
- National Natural Science Foundation of China [61376013, 91433203, J1210061]
- Science Foundation [K201311]
- Youths Science Foundation of Wuhan Institute of Technology [Q201108]
To achieve high performance for inverted structure perovskite solar cells, the design of hole-transporting layer (HTL) and related interfacial engineering are very important tasks. To avoid the hygroscopic characteristics of poly (3, 4-ethylenedioxythiophene):poly (styrenesulfonate) that may degrade the adjacent moisture-sensitive perovskite layer, here, a new CrOx-based hole-transport material has been introduced. The feasibility of fabrication efficient perovskite solar cells with CrOx and Cu-CrOx as HTLs is confirmed for the first time. Cu doping can modify the chromium ion contents and suppress the formation of surface hydroxylation and CrO3 in the CrOx film, which can increase work function, electrical conductivity, and carrier mobility of the CrOx films. Consequently, the power conversion efficiency of the corresponding device increases to 10.99% from its original value of 9.27%. This study not only provides a novel HTL system for high performance and decently stable optoelectronic devices but also reveals the importance of HTL doping for interface engineering.
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