期刊
ACS PHOTONICS
卷 3, 期 12, 页码 2490-2496出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsphotonics.6b00736
关键词
hexagonal boron nitride; single-photon emitters; optical spectroscopy; spectral jumps
类别
资金
- Research Corporation via FRED Award
- National Science Foundation [NSF-1545649, NSF-1547830]
- Research Council of Lithuania [M-ERA.NET-1/2015]
- NSF [1542863]
- Direct For Education and Human Resources
- Division Of Human Resource Development [1547830] Funding Source: National Science Foundation
- Directorate For Engineering
- Emerging Frontiers & Multidisciplinary Activities [1542863] Funding Source: National Science Foundation
Fluorescent defects recently observed under ambient conditions in hexagonal boron nitride (h-BN) promise to open novel opportunities for the implementation of on-chip photonic devices that rely on identical photons from single emitters. Here we report on the room-temperature photoluminescence dynamics of individual emitters in multilayer h-BN flakes exposed to blue laser light. Comparison of optical spectra recorded at successive times reveals considerable spectral diffusion, possibly the result of slowly fluctuating, trapped carrier-induced Stark shifts. Large spectral jumps-reaching up to 100 nm-followed by bleaching are observed in most cases upon prolonged exposure to blue light, an indication of one-directional photochemical changes possibly taking place on the flake surface. Remarkably, only a fraction of the observed emitters also fluoresce on green illumination, suggesting a more complex optical excitation dynamics than previously anticipated and raising questions on the physical nature of the crystal defect at play.
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