2D simulation of the resistive state in bipolar resistive switching memories based on oxygen vacancies

This work studies the change in the resistive state of bipolar resistive switching memories through a simulation of the stochastic processes of generation/recombination of oxygen ions and oxygen vacancies. The active layer of these devices is modeled as two-dimensional mesh. Once different configurations of oxygen vacancies are obtained by each sweep voltage, we propose a method to estimate the resistive state by a relation based on Mott hopping model for the contribution of each trap chain or conductive filaments. The current is calculated using the Poole-Frenkel effect during high resistive state and space charge limited current by Frenkel effect in low resistive state.

Automated summary

This work simulates the stochastic processes of generation/recombination of oxygen ions and oxygen vacancies to study the change in the resistive state of bipolar resistive switching memories. By modeling the active layer as a two-dimensional mesh and proposing an estimation method, the current in different resistive states is calculated.