Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications

This work shows that the complex dynamic-R-ON characteristics observed for scaled GaN HEMT devices results from the similar capture/emission activation energies of the defects present in different epitaxial layers. This work also (i) presents an optimized experimental scheme for a detailed analysis of the different charge-trapping mechanisms in GaN-on-Si HEMTs, (ii) describes the charge-trapping kinetics over a wide range of temperatures using capture/emission time (CET) maps, and (iii) models the defect energy distribution in the AlGaN barrier by analytically deriving the 2D potential profile in the access region and combining it with the results from CET maps.

Automated summary

This work reveals that the complex dynamic-R-ON characteristics observed in scaled GaN HEMT devices are caused by the similar capture/emission properties of defects in different epitaxial layers. The study also presents an optimized experimental scheme for analyzing the charge-trapping mechanisms in GaN-on-Si HEMTs, describes the charge-trapping kinetics at various temperatures using capture/emission time (CET) maps, and models the energy distribution of defects in the AlGaN barrier.