期刊
NANOSCALE RESEARCH LETTERS
卷 11, 期 -, 页码 -出版社
SPRINGEROPEN
DOI: 10.1186/s11671-016-1535-1
关键词
Carrier transport; Transparent conducting oxide; X-ray diffraction; Al-doped ZnO; Ga-doped ZnO; Magnetron sputtering; Ion plating
资金
- Japan Society for the Promotion of Science [26790050, 30320120]
- Grants-in-Aid for Scientific Research [26790050] Funding Source: KAKEN
Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (mu(H)) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 x 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a mu(H) of 38.7 cm(2)/Vs with an N of 2.22 x 10(20) cm(-3).
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