High speed uncooled MWIR infrared HgCdTe photodetector based on graded bandgap structure

A high-speed room-temperature mid-wave infrared HgCdTe photodetector based on graded bandgap structure was reported. This study explores a n-on-p homojunction structure on epitaxial HgCdTe,which achieves a total response time of 1. 33 ns(750 MHz)under zero bias voltage at 300 K,which is faster than commercial un. cooled MCT photovoltaic photodetectors and MWIR HgCdTe APDs under high reverse bias. The analysis based on one- dimensional equations shows that compositional grading in the absorber layer can form built-in electric field and the transport mechanism of carriers is changed,the model is confirmed by the comparisons of different graded HgCdTe photodetectors. Thereby,this work facilitates design of the high-speed HgCdTe MWIR detec. tors,and provides a promising method to optimize the ultrafast MWIR infrared photodetectors.

Automated summary

A high-speed room-temperature mid-wave infrared HgCdTe photodetector based on graded bandgap structure was developed, achieving a fast response time through the use of n-on-p homojunction structure. Analysis showed that the compositional grading in the absorber layer formed an electric field, thus altering the carrier transport mechanism.