Failure modes and analysis for HgCdTe linear photoconductive detectors

Failure modes during screening tests and application processes have been summed up for HgCdTe linear photoconductive detectors which have been applied in several programs. The mechanisms behand these failure modes have been analyzed based on the combination of HgCdTe material parameters,device structure dimensions,detector physics,fabrication processes and device test techniques. Criteria of failure modes have been firstly proposed for deeper understanding of HgCdTe linear photoconductive detector and better optimization of detector screening process,which are also helpful for the analysis and resolution of problems encountered in the application of HgCdTe linear photoconductive detectors.

Automated summary

This article summarizes the failure modes of HgCdTe linear photoconductive detectors that have been used in several programs. The mechanisms behind these failure modes have been analyzed based on the combination of HgCdTe material parameters, device structure dimensions, detector physics, fabrication processes, and device test techniques. Criteria for failure modes have been proposed for a better understanding of HgCdTe linear photoconductive detectors and optimization of the screening process. These findings are also helpful for analyzing and resolving problems encountered in the application of HgCdTe linear photoconductive detectors.