期刊
NANO ENERGY
卷 22, 期 -, 页码 129-135出版社
ELSEVIER
DOI: 10.1016/j.nanoen.2016.02.020
关键词
Chalcogenide perovskite; Sulfurization; Band gap engineering; Ionic semiconductor
类别
资金
- NSF [DMR-1104994, CBET-1510121, MRI-1229208]
- Education Program for Talented Students of Xi'an Jiaotong University
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1510121] Funding Source: National Science Foundation
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1510948] Funding Source: National Science Foundation
We report the synthesis and characterization of a novel class of ionic semiconductor materials inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing. (C) 2016 Elsevier Ltd. All rights reserved.
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