Marriage of Ferroelectric Memories and BEOL-compatible Oxide Semiconductors to Empower Future Integrated Circuits

In this talk, I will present our recent research progress on HfO2-based ferroelectric memories and monolithic 3D integration enabled by oxide semiconductor transistors for future integrated circuits. I will start with the motivation for emerging non-volatile memories and monolithic 3D integration. This will be followed by introducing various doped-HfO2 ferroelectric materials and two types of ferroelectric memories, i.e. FeFET and FTJ. I will then move on to discuss how to use these ferroelectric memories for in-memory computing as well as how to integrate these memories in a 3D monolithic manner by using oxide semiconductors to explore their full potential. The talk will end with a summary and adoption challenges.

Automated summary

This talk presents the recent research progress on HfO2-based ferroelectric memories and monolithic 3D integration enabled by oxide semiconductor transistors for future integrated circuits. The talk covers the motivation, various doped-HfO2 ferroelectric materials, two types of ferroelectric memories (FeFET and FTJ), in-memory computing using these memories, 3D monolithic integration, and adoption challenges.