Modeling and Analysis of High-Speed Modified Uni-Travelling-Carrier Photodiodes Under High Optical Power Injection

We simulated InGaAs/InP Modified Uni-TravelingCarrier Photodiodes (MUTC-PDs) with different reverse bias voltages under high optical power injection, using a commercial device level simulator Apsys. By optimizing the absorber layer structure and the operating voltage, this work achieved an MUTC-PD design with an opto-electric responsivity of 0.16A/W and over 300GHz 3-dB bandwidth under 10 mW/mu m(2) optical injection density.

Automated summary

In this study, we simulated InGaAs/InP Modified Uni-Traveling-Carrier Photodiodes (MUTC-PDs) under high optical power injection with different reverse bias voltages. By optimizing the absorber layer structure and the operating voltage, we achieved an MUTC-PD design with a opto-electric responsivity of 0.16A/W and over 300GHz 3-dB bandwidth under 10 mW/μm^2 optical injection density.