期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 4, 期 39, 页码 9245-9250出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc02467j
关键词
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资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2015R1D1A1A09057970]
- [DTRA1-11-0020]
- National Research Foundation of Korea [2015R1D1A1A09057970, 21A20131812182] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Solar-blind photodetectors have received a great deal of interest owing to their high selectivity for deep ultra-violet tight in the presence of visible tight. The development of alternative materials and innovative device designs are necessary for such solar-blind photodetectors, as the currently available commercial devices have issues pertaining to chemical and thermal instability, cost, and material handling due to their rigidity. Here, we fabricated solar-blind photodetectors based on exfoliated quasi-two-dimensional beta-Ga2O3 flakes with optimal opto-electrical properties (direct bandgap of similar to 4.9 eV), chemical and thermal stability, and then systematically characterized their photoresponsive properties. The fabricated device structures were based on back-gated field-effect transistors, allowing us to control the dark currents. These photodetectors exhibit extraordinary photoresponsive properties including the highest responsivity (1.8 x 10(5) A W-1) among reported semiconductor thin-film solar-blind photodetectors.
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