期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 4, 期 39, 页码 9294-9302出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc02469f
关键词
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资金
- National Natural Science Foundation of China [U1304518]
- High Performance Computing Center of Henan Normal University
The band structures and optical characteristics of group IV (Si, Ge) and V (P, As) element-alloyed C2N monolayers are investigated by means of first-principles methods. The results indicate that C2N1-xPx and C2N1-xAsx alloys are easier to fabricate than C2-xSixN and C2-xGexN alloys. Moreover, it is feasible to construct mixed C2N1-xPx and C2N1-xAsx alloys with tunable composition and band gap. When the doping concentration increases, the band gap shows a decreasing tendency, and the absorption edges exhibit a red shift in these alloys. These obtained results predicate that C2N1-xPx and C2N1-xAsx alloys may be promising candidates for optoelectronic applications.
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