4.6 Article

Ferrocene-containing poly(fluorenylethynylene)s for nonvolatile resistive memory devices

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 4, 期 5, 页码 921-928

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5tc03042k

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资金

  1. National Natural Science Foundation of China [51373145, 61274018, 21174064]
  2. Hong Kong Research Grants Council [HKBU203313]
  3. Areas of Excellence Scheme, University Grants Committee of HKSAR [AoE/P-03/08]
  4. Hong Kong Baptist University [FRG2/13-14/083, FRG2/13-14/078]
  5. Science, Technology and Innovation Committee of Shenzhen Municipality [JCYJ20140419130507116, JCYJ20140818163041143]

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Four new conjugated ferrocene-containing poly(fluorenylethynylene)s (PFcFE1-PFcFE4) with triphenylamine, carbazole or thiophene moieties in the main chain have been designed and synthesized via a Sonogashira coupling reaction. Their structures, molecular weights, optical features, thermal properties and memory performance were well studied. Two terminal single layer devices (ITO/polymer/Al) based on PFcFE1, PFcFE2 and PFcFE3 exhibited flash memory behaviours, while PFcFE4 shared the common characteristics of the write-once read-many times'' (WORM) memory effect. These results would provide a new series of ferrocene-containing conjugated polymers with further opportunities for memory applications.

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