期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 4, 期 5, 页码 991-998出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5tc03238e
关键词
-
资金
- National Natural Science Foundation [51172167, 11574236]
- 973 Program'' of China [2013CB632502]
Few-layer black phosphorus has recently emerged as a promising candidate for novel electronic and optoelectronic devices. Here we demonstrate by first-principles calculations and Boltzmann theory that black phosphorus could also have potential thermoelectric applications and a fair ZT value of about 1.1 can be achieved at elevated temperature. Moreover, such a value can be further increased to 5.4 by substituting the P atom with the Sb atom, giving a nominal formula of P0.75Sb0.25. Our theoretical work suggests that high thermoelectric performance can be achieved without using complicated crystal structures or seeking for low-dimensional systems.
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