4.6 Article

Quantitative prediction of morphology and electron transport in crystal and disordered organic semiconductors

期刊

JOURNAL OF MATERIALS CHEMISTRY C
卷 4, 期 47, 页码 11238-11243

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c6tc03823a

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资金

  1. National Science Foundation [DMR-1335645]
  2. UCLA
  3. University of Marmara
  4. NSF [OCI-1053575]
  5. Department of Energy
  6. Direct For Mathematical & Physical Scien [1335645] Funding Source: National Science Foundation
  7. Division Of Materials Research [1335645] Funding Source: National Science Foundation

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The morphologies and electron mobilities for 20 single-crystal and 21 thin-film organic n-type semiconductors are predicted using a multi-mode methodology previously applied by our group for p-type materials [I. Yavuz, et al., J. Am. Chem. Soc., 2015, 137, 2856-2866]. The calculations simulate Marcus charge-hopping with a kinetic Monte Carlo method using the VOTCA package of Andrienko et al. The calculations assume perfect order for single crystal morphologies, but structural disorder is incorporated into thin-film calculations using molecular dynamics to simulate the energetic disorder of thin-film morphologies. Predicted electron mobilities for both morphologies are typically within one order of magnitude.

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