期刊
JOURNAL OF MATERIALS CHEMISTRY A
卷 4, 期 26, 页码 10151-10158出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c6ta01558a
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资金
- DGIST R&D Programs of the Ministry of Science, ICT & Future Planning of Korea [16-BD-05]
- New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korean government's Ministry of Trade, Industry and Energy [20123010010130]
Although Cu2ZnSn(S,Se)(4) (CZTSSe) has attracted attention as an alternative to CuInGaSe2 (CIGS) as an absorber material in solar cells, its low efficiency is a serious shortcoming preventing its commercialization. To realize a high-efficiency CZTSSe solar cell, improved grain crystallinity, inhibited secondary-phase formation, controlled defect generation, adequate Na content, and band gap grading are required in the absorber layer. Few studies have focused specifically on band gap grading. In this study, a method of using SeS2, a new potential chalcogenization source material, to control the S and Se contents in a CZTSSe absorber and its effects were investigated. Using an appropriate SeS2/Se weight ratio, band gap grading was realized within the depletion region. By increasing the value of V-OC through band gap grading in the depletion region, a record V-OC deficit of 0.576 V was achieved. Furthermore, the possibility of enhancing JSC through the formation of a type-inverted n-type phase at the absorber surface in response to an appropriate alignment of the conduction-band minimum energy level and the Fermi energy pinning level is discussed. By introducing the chalcogenization source material SeS2 during the annealing process, CZTSSe solar cells with a maximum efficiency of 12.3% were obtained.
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