Carrier Transport and Radiative Recombination Rate Enhancement in GaN/AlGaN Multiple Quantum Well UV-LED Using Band Engineering for Light Technology

Graded composition in the barriers of multi-quantum was depicted and incorporated upon a c-plane GaN/AlGaN light emitting diodes (LEDs) constructed above a sapphire substrate for carrier transportation enhancement and lowering of efficiency droop. Because of their potential applications in various fields, ultra-violet LEDs formed on gallium nitride (GaN) materials have been the topic of interest for various researchers. The simulation outcomes exhibit that optimized light emitting diode having an aluminum constitution graded between 26% and similar to 2% in per triangular barrier demonstrates largest internal quantum efficiency (IQE) (38%) around 100 A/cm(2) indicating significant rise compared to the conventional device having square barriers. This improvement has been ascribed to the modified energy band structures that upgrade the uniformity during transportation of carriers and also enhance the recombination rate in every GaN quantum well. As a result of this, the IQE of the device improves. The simulated LED device with graded quantum barrier structure acquires lower series resistance and substantially minimized efficiency droop characteristics of nearly 3.6% with respect to 11.8% for conventional device, supporting carrier enhancement (both electron as well as hole) transport in our designed device.

Automated summary

The grayscale composition in the barriers of multi-quantum can enhance the carrier transportation and mitigate the efficiency droop in c-plane GaN/AlGaN LEDs. The optimized LEDs with graded aluminum composition exhibit higher internal quantum efficiency and lower series resistance compared to conventional devices, resulting in improved carrier transport and reduced efficiency droop.