Ferroelastic Domain Walls in BiFeO3 as Memristive Networks

Electronic conduction along individual domain walls (DWs) is reported in BiFeO3 (BFO) and other nominally insulating ferroelectrics. DWs in these materials separate regions of differently oriented electrical polarization (domains) and are just a few atoms wide, providing self-assembled nanometric conduction paths. Herein, it is shown that electronic transport is possible also from wall-to-wall through the dense network of as-grown DWs in BFO thin films. Electric field cycling at different points of the network, performed locally by conducting atomic force microscopy (cAFM), induces resistive switching selectively at the DWs, both for vertical (single wall) and lateral (wall-to-wall) conduction. These findings are the first step toward investigating DWs as memristive networks for information processing and in-materio computing.

Automated summary

The study discovers the electronic conduction along individual domain walls (DWs) in nominally insulating ferroelectric materials, providing potential applications for self-assembled nanometric conduction paths. These findings are of great significance for investigating DWs as memristive networks for information processing and in-material computing.