Reconfigurable spin tunnel diodes by doping engineering VS2 monolayers

We propose a reconfigurable spin tunnel diode based on a small spin-gapped semiconductor (non-doped VS2 monolayer) and semi-metallic magnets (doped VS2 monolayer) separated by a thin insulating tunneling barrier (h-BN). By using first-principles calculations assisted by the nonequilibrium Green's function method, we have carried out a comprehensive study of spin-dependent current and spin transport properties while varying the bias. The device exhibited a magnetization-controlled diode-like behavior with forward-allowed current under antiparallel magnetizations and reverse-forbidden current under parallel magnetizations at the two electrodes. The threshold voltage is tunable by the hole doping density of VS2 monolayers. The doping effect on VS(2 )monolayers indicates that the magnetic moments, the Heisenberg exchange parameters and Curie temperatures can be monotonically reduced by a larger hole doping density. Our study on VS2 heterostructures has presented a simple and practical device strategy with very promising applications in spintronics.

Automated summary

We propose a reconfigurable spin tunnel diode based on a small spin-gapped semiconductor and semi-metallic magnets separated by a thin insulating tunneling barrier. Through calculations and comprehensive study of spin-dependent current and spin transport properties, we find that the device exhibits magnetization-controlled diode-like behavior and the threshold voltage can be tuned by the doping density. The doping effect on the spin-gapped semiconductor indicates that the magnetic moments, Heisenberg exchange parameters, and Curie temperatures can be reduced by a larger hole doping density. Our study presents a simple and practical device strategy with promising applications in spintronics.