Preparation of NiS/Ti3C2Tx co-doped with N and P at the covalent interface and its electromagnetic wave absorption properties

The harm of electromagnetic waves on human daily life has gradually received attention, and electromagnetic waves absorption materials have been used to address this issue. MXene, as a new type of 2D material, is a very promising electromagnetic wave absorption material. In this study, NiS nanoparticles were grown on the surface of S terminated Ti3C2Tx, and -S group acted as sulfur sources to construct Ti-S-Ni covalent interface directly in NiS/Ti3C2Tx composites. To further regulate the interface structure and electromagnetic properties, -P and -NH2 groups were also introduced onto the surface of MXene to achieve the N, P co-doping NiS/Ti3C2Tx composites with covalent interface. By investigating the electromagnetic wave absorption performance of the composites, it was found that N and P doping could effectively enhance the electron transfer rate at the interface and optimize the conduction loss, resulting in a significant improvement in performance. The minimum reflection loss was -50.6 dB at a frequency of 15.6 GHz, and the matching thickness was only 1.14 mm with an effective absorption bandwidth of 3.6 GHz. These results provide an important references and guidance for further research and development of high-performance electromagnetic wave absorption materials.

Automated summary

In this study, NiS/Ti3C2Tx composites with covalent interface were successfully synthesized through the growth of NiS nanoparticles on the surface of S terminated Ti3C2Tx, and further doping N and P groups. The results show that N and P doping can effectively enhance the electron transfer rate at the interface and optimize the conduction loss, resulting in a significant improvement in electromagnetic wave absorption performance.