4.6 Article

Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch Tests

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Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

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Summary: The novel polishing technique combining plasma electrolytic processing and mechanical polishing (PEP-MP) effectively polishes single-crystal 4H-SiC surfaces, resulting in a scratch-free and damage-free surface with reduced roughness. The hardness of the single-crystal 4H-SiC surface is significantly decreased after plasma electrolytic processing, while the material removal rate of PEP-MP is about 21.8 μm/h.

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