期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 11, 期 40, 页码 13681-13690出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d3tc02422a
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In this study, composite films of CuI-Cu2O were successfully developed, with improved surface morphology and electronic properties. The optimized CuI-Cu2O films demonstrated good transparency, low hole concentration, high hole mobility, and high conductivity. Additionally, the electrical properties of CuI-Cu2O films exhibited greater stability compared to pure CuI films.
Low-temperature processable p-type transparent conductors are essential for flexible transparent electronics. Current research focuses primarily on wide-band gap copper-based oxides for p-type transparent conductors. However, these oxides generally exhibit inferior performance compared to their n-type counterparts, and their high preparation temperature is unfavorable for flexible electronic applications. CuI serves as a p-type transparent conductor with the ability to be prepared at low temperatures while possessing properties comparable to n-type transparent conductors. The conventional method for CuI film fabrication involves iodination of Cu films. Nevertheless, films produced through this approach exhibit a frosted-glass-like appearance and challenging-to-regulate electrical properties, rendering them unsuitable for electronic devices. In this study, we successfully developed composite films of CuI-Cu2O, demonstrating improved surface morphology and electronic properties at room temperature. The inclusion of Cu2O suppresses the migration of CuI grain boundaries during the iodination process, leading to a reduction in CuI grain size and the formation of a polycrystalline structure with a smoother surface. The increased concentration of grain boundaries within the films, along with charge redistribution between Cu2O and CuI, results in a decrease in hole concentration. As the Cu2O content increases, the relative concentration of I vacancies in the films decreases, leading to an enhancement in hole mobility. The film conductivity initially rises and subsequently decreases with higher Cu2O content. For CuI-Cu2O films with optimized Cu2O composition, visible region transparency ranges from 70% to 80%, hole concentration measures 6.16 x 10(18 )cm(-3), hole mobility reaches 25.40 cm(2) V-1 s(-1), and conductivity amounts to 18.57 S cm(-1). Furthermore, after a period of six months, the electrical properties of CuI-Cu2O films exhibit greater stability compared to pure CuI films. These findings are expected to expedite the widespread application of CuI films within transparent electronics.
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