期刊
JOURNAL OF COLLOID AND INTERFACE SCIENCE
卷 652, 期 -, 页码 1503-1511出版社
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2023.08.149
关键词
Heterojunction; Photocatalytic hydrogen production; Charge separation; In-situ
This study developed a heterojunction photocatalyst by in-situ growth of 2D cadmium sulfide on the surface of copper-doped In2S3 to suppress charge recombination. The experiment showed that the efficient interface contact formed between In2S3 and CdS promoted charge transfer and exhibited a high spatial charge separation rate.
Two-dimensional (2D) beta indium sulfide (& beta;-In2S3) shows great potential in photocatalytic hydrogen production due to its broad-spectrum response, relatively negative conduction band edge, high carrier mobility and low toxicity. However, the high charge recombination rate limits the application of In2S3. Here, we in-situ grew 2D cadmium sulfide (CdS) on the surface of In2S3 doped with copper ions (Cu2+) to construct a heterojunction photocatalyst that suppresses charge recombination. The in-situ grown method and shared sulfur composition were conducive to forming the efficient interface contact between In2S3 and CdS, promoting charge transfer and showing the high spatial charge separation rate, resulting in a hydrogen production rate of 868 & mu;mol g-1h- 1. The induced Cu2+ extended the light absorption range and stabilized the photocatalyst. By creating stable 2D/2D heterojunction photocatalysts with high charge separation efficiency, this work opens new possibilities for applying In2S3 materials in photocatalytic hydrogen production.
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