期刊
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
卷 6, 期 3, 页码 356-364出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TTHZ.2016.2549358
关键词
Heterojunctions; nanosensors; scanning-probe microscopy; semiconductor devices
资金
- Japan Science and Technology Agency
- Canon Foundation
- Mitsubishi Foundation
- Funding Program for Next Generation World-Leading Researchers, MEXT/JSPS KAKENHI Grants [26286005, 26600010, 26103513, 26107516]
- Tokyotech Advanced Researchers (STAR)
- Grants-in-Aid for Scientific Research [26286005, 26103513, 26107516, 26600010] Funding Source: KAKEN
Near-field terahertz (THz) imaging is vital to investigations in subwavelength regions down to the micro/nanometer scale. This technology is particularly useful for examining objects, such as nanomaterials, polymers, cells, and biomolecules. The first part of this paper briefly explains two types of near-field THz imaging technologies: aperture type and apertureless type. The second part explains our chip-based near-field imaging technology. We perform collection-mode near-field THz imaging by scanning an evanescently coupled THz detector closely across a sample surface. The implementation of a magnetically tunable THz detection method further enables us to obtain frequency-selective near-field THz images. As an application of this technology, cryogenic THz-emission imaging is presented, wherein THz radiation associated with electron injection into a semiconductor device is imaged with no THz pump source. This technique provides direct information about the spatial distribution of electrons injected from an electrode into a semiconductor channel.
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