Stably doped graphene transparent electrode with improved light-extraction for efficient flexible organic light-emitting diodes

Graphene-based flexible transparent electrodes (FTEs) are promising candidate materials for developing next-generation flexible organic light-emitting diodes (OLEDs). However, the quest for high-efficiency OLEDs is hindered by the low light-extraction and charge injection efficiencies of graphene electrode. Here, we combine the frustrated Lewis pair doping with nanostructure engineering to obtain high-performance graphene FTE. A p-type dopant aci-nitromethane-tris(pentafluorophenyl) borane (ANBCF) was synthesized and deposited on graphene FTE to form an aperiodic nanostructure, which not only improves the light-extraction but also stably p-dopes graphene to enhance its hole injection. The use of ANBCF-doped graphene as the anode enables high-efficiency flexible green OLEDs with external quantum efficiency (EQE) and power efficiency (PE) out-performing most flexible graphene OLEDs of comparable structure. This study provides a simple and effective pathway to fabricate highperformance graphene FTEs for efficient flexible OLEDs.

Automated summary

This study successfully fabricates high-performance graphene FTEs for efficient flexible OLEDs by combining frustrated Lewis pair doping and nanostructure engineering. By depositing a p-type dopant on graphene electrode, both the light-extraction efficiency and charge injection efficiency are improved.