期刊
IEEE JOURNAL OF MICROWAVES
卷 3, 期 2, 页码 827-851出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMW.2023.3247360
关键词
Attenuators; delay networks; emerging technologies; germanium telluride (GeTe); MTT 70th Anniversary Special Issue; millimeter-wave (mmWave) components; MMICs; phase change material (PCM); phase shifters; RF switches; RF integrated circuits; scalable PCM switch matrices; tunable circuits
This article provides an overview of the application of Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials in the field of radio frequency (RF), and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on these materials in depth.
Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO2), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.
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