期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 6, 期 6, 页码 1654-1662出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2016.2604574
关键词
Carrier transport; contact resistivity; nanocrystalline silicon; Schottky barrier; silicon heterojunction (SHJ); solar cells; temperature dependence
Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor (FF) values due to a high contact resistivity. In this study, we show that the replacement of doped amorphous silicon with nanocrystalline silicon is beneficial for device performance. Optically, we observe an improved short-circuit current density when these layers are applied to the front side of the device. Electrically, we observe a lower contact resistivity, as well as higher FF. Importantly, our cell parameter analysis, performed in a temperature range from -100 to +80 degrees C, reveals that the use of hole-collecting p-type nanocrystalline layer suppresses the carrier transport barrier, maintaining FFs in the range of 70% at -100 degrees C, whereas it drops to 40% for standard amorphous doped layers. The same analysis also reveals a saturation onset of the open-circuit voltage at -100 degrees C using doped nanocrystalline layers, compared with saturation onset at -60 degrees C for doped amorphous layers. These findings hint at a reduced importance of the parasitic Schottky barrier at the interface between the transparent electrodes and the selective contact in the case of nanocrystalline layer implementation.
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