期刊
IEEE JOURNAL OF PHOTOVOLTAICS
卷 6, 期 1, 页码 244-251出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2015.2480225
关键词
Characterization; perimeter recombination; photoluminescence; photovoltaic; silicon; simulation
资金
- Australian Government through the Australian Renewable Energy Agency [AR4NA]
- Australian National University
Perimeter recombination causes significant efficiency loss in solar cells. This paper presents a method to quantify perimeter recombination via luminescence imaging for silicon solar cells embedded within the wafer. The validity of the method is discussed and verified via 2-D semiconductor simulation. We demonstrate the method to be sufficiently sensitive in that it can quantify perimeter recombination even in a solar cell where no obvious deviation from ideality is observed in the current-voltage (J-V) curve.
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