Two-dimensional gallium nitride (2D GaN) is a material with a large direct bandgap, high melting point, and large Young's modulus, making it suitable for miniaturized electronic gadgets. In this study, we successfully synthesized free-standing 2D GaN atomic sheets using sonochemical exfoliation and the modified Hummers method. The exfoliated sheets exhibited good chemical phase purity and stability, and showed potential applications in optoelectronics, spintronics, and sensors.
Two-dimensional gallium nitride (2D GaN) with a large direct bandgap of similar to 5.3 eV, a high melting temperature of similar to 2500 degrees C, and a large Young's modulus similar to 20 GPa developed for miniaturized interactive electronic gadgets can function at high thermal and mechanical loading conditions. Having various electronic, optoelectronic, spintronic, energy storage devices and sensors in perspective and the robust nature of 2D GaN, it is highly imperative to explore new pathways for its synthesis. Moreover, free- standing sheets will be desirable for large-area applications. We report our discovery of the synthesis of free-standing 2D GaN atomic sheets employing sonochemical exfoliation and the modified Hummers method. Exfoliated 2D GaN atomic sheets exhibit hexagonal and striped phases with microscale lateral dimensions and excellent chemical phase purity, confirmed by Raman and X-ray photoelectron spectroscopy. 2D GaN is highly stable, as confirmed by TGA measurements. While photodiode, FET, spintronics, and SERS-based molecular sensing, IRS element in 6G wireless communication applications of 2D GaN have been demonstrated, its nanocomposite with PVDF exhibits an excellent thermoplastic and piezoelectric behavior.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据