☆ 4.4 Article

Demonstration of Ultraviolet μLED Array With Novel Electrical Contact Etch Mask

IEEE JOURNAL OF QUANTUM ELECTRONICS (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Engineering, Electrical & Electronic

Quantum Dots Integrated Deep-Ultraviolet Micro-LED Array Toward Solar-Blind and Visible Light Dual-Band Optical Communication

Muhammad Hunain Memon et al.

Summary: Optical wireless communication (OWC) systems, specifically in the solar-blind deep-ultraviolet (DUV) and visible-light (VL) band, are crucial for next-generation data transmission and acquisition due to their superior advantages in free space or underwater applications. In this study, a vertically integrated DUV micro-LED array with CdSe/ZnS blue color quantum dots is proposed to emit dual wavelengths, significantly expanding the capacity and functionality of OWC. The device achieves a bandwidth of 254 and 36 MHz and data rates of 586 and 55 Mbps using the on-off keying (OOK) modulation scheme at emission wavelengths of 275 and 470 nm, respectively. Importantly, the bit error rate is below the forward error correction threshold, demonstrating the feasibility of implementing this low-cost and compact device for practical solar-blind and VL dual-band communication, such as in marine science and ocean exploration.

IEEE ELECTRON DEVICE LETTERS (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Importance of layer distribution in Ni and Au based ohmic contacts to p-type GaN

Clement Mauduit et al.

Summary: In this study, the importance of layer distribution after annealing to form a high quality ohmic contact on p-type GaN was investigated using nickel (Ni) and gold (Au) thin layer association. The Au/Ni stack showed the most promising results.

MICROELECTRONIC ENGINEERING (2023)

添加到收藏夹

Article Physics, Applied

Mg-doping and free-hole properties of hot-wall MOCVD GaN

A. Papamichail et al.

Summary: Hot-wall MOCVD is explored for Mg doping of GaN, enabling low doping concentration and low impurity level in GaN:Mg under optimized growth conditions. The impact of growth conditions on Mg acceptor incorporation and compensation can be explained by analyzing Ga supersaturation. A comprehensive picture of GaN:Mg growth is established through analysis of extended defects and electrical properties, providing guidance for growth parameters optimization.

JOURNAL OF APPLIED PHYSICS (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Barbara A. Kazanowska et al.

Summary: This study explores the controlled fabrication of vertical, tapered, and high-aspect ratio GaN nanowires using a two-step process. The nanowires exhibit smooth semipolar faceting and show gap size dependent turn-on voltage in their field emission properties.

NANOTECHNOLOGY (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Inverse Tapered AlGaN Micropillar and Nanowire LEDs for Improved Light Extraction Efficiency at 270 nm

Bryan Melanson et al.

Summary: The effects of inverse tapering on the eta(EXT) of AlGaN microstructures and nanostructures were studied. Results show that inverse tapering can significantly improve eta(EXT). These findings could enable the development of record-high EQE DUV LEDs based on arrays of high aspect ratio structures with high eta(EXT).

IEEE PHOTONICS JOURNAL (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

High Performance of a Non-Polar AlGaN-Based DUV-LED with a Quaternary Superlattice Electron Blocking Layer

Qian Dai et al.

Summary: The use of lattice-matched AlInGaN/AlGaN quaternary superlattice electron blocking layer in a-plane non-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) can significantly improve their performance, including internal quantum efficiency and optical output power. These improvements are mainly due to the enhanced electron blocking capability and hole injection efficiency, leading to improved radiative recombination in the active region.

JOURNAL OF ELECTRONIC MATERIALS (2022)

添加到收藏夹

Review Crystallography

Recent Progress on AlGaN Based Deep Ultraviolet Light-Emitting Diodes below 250 nm

Chunyue Zhang et al.

Summary: AlGaN-based deep ultraviolet (DUV) LEDs, especially below 250 nm, have great potential in various applications, but facing challenges of low external quantum efficiencies due to issues with doping, carrier confinements, light extraction, etc.

CRYSTALS (2022)

添加到收藏夹

Article Optics

Enhancing the light extraction efficiency for AlGaN-based DUV LEDs with a laterally over- etched p-GaN layer at the top of truncated cones

Gai Zhang et al.

Summary: The light extraction efficiency (LEE) for AlGaN-based DUV LEDs can be enhanced by using air-cavity-shaped inclined sidewalls and laterally over-etched p-GaN layers at the top of truncated cones, which generates more light escape paths. This method increases optical power by 30% without affecting forward bias or carrier injection. Additionally, simulations show that the over-etched p-GaN layer reduces optical absorption and provides extra light paths for DUV photons to improve LEE.

OPTICS EXPRESS (2021)

添加到收藏夹

Article Optics

AlGaN-based deep ultraviolet micro-LED emitting at 275 nm

Huabin Yu et al.

Summary: The investigation revealed that micro-scale AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) with smaller mesa areas deliver considerably higher light output power density and can sustain a higher current density. Reducing the diameter of LED chips can increase the peak external quantum efficiency (EQE) and peak EQE current density, but it may also lead to longer wavelength emission and larger full-width at half-maximum (FWHM) in LEDs with smaller chip sizes due to self-heating effect at high current injection.

OPTICS LETTERS (2021)

添加到收藏夹

Article Nanoscience & Nanotechnology

Realization of electrically driven AlGaN micropillar array deep-ultraviolet light emitting diodes at 286 nm

Bryan Melanson et al.

Summary: In this study, electrically driven deep-ultraviolet (DUV) AlGaN micropillar array light emitting diodes (LEDs) were successfully fabricated using top-down approach, showing high output power density. The ordered micropillar arrays with inverse-taper profile were achieved through wet etching and dry etching, leading to stable electroluminescence and competitive output power density in DUV LEDs.

AIP ADVANCES (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary

High-Resolution 960 x 540 and 1920 x 1080 UV Micro Light-Emitting Diode Displays with the Application of Maskless Photolithography

Meng-Chyi Wu et al.

Summary: This study reports high-definition UV micro-LED displays with resolutions of 960x540 and 1920x1080, and high pixel densities of up to 2000 and 3200 PPI. The 1920x1080 micro-LED array with inverted trapezoidal shape and the conventional vertical mesa for the 960x540 micro-LED array are fabricated using a novel self-aligned process. Through flip-chip bonding technology, the 1920x1080 micro-LED display shows higher light output power compared to the 960x540 micro-LED display.

ADVANCED PHOTONICS RESEARCH (2021)

添加到收藏夹

Article Optics

AlGaN nanowires with inverse taper for flexible DUV emitters

Matthew Hartensveld et al.

Summary: This research demonstrates AlGaN nanowires with an inverse taper profile achieved through a wet etching process, which can be used to form flexible devices through a novel peeling process, potentially improving device efficiency and enabling flexible emitters. The study also shows that the inverse taper structure promotes enhanced light extraction from the nanowire and the strain relaxation induced redshift of released nanowires embedded within a polymer layer.

JOURNAL OF PHYSICS-PHOTONICS (2021)

添加到收藏夹

Article Physics, Applied

Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1μm in diameter

Jordan M. Smith et al.

APPLIED PHYSICS LETTERS (2020)

添加到收藏夹

Article Nanoscience & Nanotechnology

Multidirectional UV-LED lithography using an array of high-intensity UV-LEDs and tilt-rotational sample holder for 3-D microfabrication

Sabera Fahmida Shiba et al.

MICRO AND NANO SYSTEMS LETTERS (2020)

添加到收藏夹

Article Agriculture, Multidisciplinary

Non-destructive determination of strawberry fruit and juice quality parameters using ultraviolet, visible, and near-infrared spectroscopy

Katarzyna Wlodarska et al.

JOURNAL OF THE SCIENCE OF FOOD AND AGRICULTURE (2019)

添加到收藏夹

Article Optics

Operating behavior of micro-LEDs on a GaN substrate at ultrahigh injection current densities

C. C. Li et al.

OPTICS EXPRESS (2019)

添加到收藏夹

Article Multidisciplinary Sciences

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

Muhammad Fahlesa Fatahilah et al.

SCIENTIFIC REPORTS (2019)

添加到收藏夹

Article Physics, Applied

Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes

Matthew Hartensveld et al.

JOURNAL OF APPLIED PHYSICS (2019)

添加到收藏夹

Article Chemistry, Physical

Photocatalytic Hydrogen Production Under Near-UV Using Pd-Doped Mesoporous TiO2 and Ethanol as Organic Scavenger

Bianca Rusinque et al.

CATALYSTS (2019)

添加到收藏夹

Article Polymer Science

Sustainable near UV-curable acrylates based on natural phenolics for stereolithography 3D printing

Rui Ding et al.

POLYMER CHEMISTRY (2019)

添加到收藏夹

Article Food Science & Technology

Effects of ultraviolet light emitting diodes (LEDs) on microbial and enzyme inactivation of apple

Merve Pelvan Akgun et al.

INTERNATIONAL JOURNAL OF FOOD MICROBIOLOGY (2017)

添加到收藏夹

Article Optics

Influence of size-reduction on the performances of GaN-based micro-LEDs for display application

Francois Olivier et al.

JOURNAL OF LUMINESCENCE (2017)

添加到收藏夹

Article Nanoscience & Nanotechnology

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

Feng Yu et al.

NANOTECHNOLOGY (2017)

添加到收藏夹

Article Materials Science, Multidisciplinary

Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

Davide Priante et al.

OPTICAL MATERIALS EXPRESS (2017)

添加到收藏夹

Article Multidisciplinary Sciences

Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing

Elena Alexandra Serban et al.

SCIENTIFIC REPORTS (2017)

添加到收藏夹

Article Optics

Application of LEDs for UV-Curing

Christian Dreyer et al.

III-NITRIDE ULTRAVIOLET EMITTERS: TECHNOLOGY AND APPLICATIONS (2016)

添加到收藏夹

Article Chemistry, Multidisciplinary

High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111)

Robert Koester et al.

NANO LETTERS (2015)

添加到收藏夹

Article Nanoscience & Nanotechnology

Ohmic Contacts on p-GaN

Jingli Chen et al.

ADVANCED ELECTRONIC MATERIALS (2015)

添加到收藏夹

Review Chemistry, Physical

Photocatalysis from UV/Vis to Near-Infrared Light: Towards Full Solar-Light Spectrum Activity

Yuanhua Sang et al.

CHEMCATCHEM (2015)

添加到收藏夹

Article Engineering, Chemical

Application of UV light emitting diodes to batch and flow-through water disinfection systems

Kumiko Oguma et al.

DESALINATION (2013)

添加到收藏夹

Article Physics, Applied

Study of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performance

Shih-Cheng Huang et al.

JOURNAL OF APPLIED PHYSICS (2011)

添加到收藏夹

Article Physics, Applied

Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN

LC Chen et al.

APPLIED PHYSICS LETTERS (2000)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.