Demonstration of Ultraviolet μLED Array With Novel Electrical Contact Etch Mask

We report on the realization of a uniform array of electrically driven, individually addressable micro light-emitting diodes (mu LEDs) with diameters of 2.5 mu m emitting at 372 nm. This highly ordered array was fabricated via a top-down fabrication approach using a novel Ni/Au/Ni structure which combines both a Ni/Au low-resistance electrical contact and durable Ni etch mask. The use of this novel structure allows individual mu LEDs to be addressed with promising electroluminescence intensity and narrow linewidth at ultraviolet-A (UV-A) band. This improved control over mu LED output power and emission location makes our approach an important step towards the development of high efficiency UV-A mu LEDs for a range of applications.

Automated summary

We report on the realization of a uniform array of electrically driven, individually addressable micro light-emitting diodes (mu LEDs) with diameters of 2.5 μm emitting at 372 nm. This highly ordered array was fabricated via a top-down fabrication approach using a novel Ni/Au/Ni structure. The use of this novel structure allows individual mu LEDs to be addressed with promising electroluminescence intensity and narrow linewidth at ultraviolet-A (UV-A) band. This improved control over mu LED output power and emission location makes our approach an important step towards the development of high efficiency UV-A mu LEDs for a range of applications.