A novel mild etchant for photoelectrochemical etching of GaN with enhanced photoresponse

Article Chemistry, Physical

Facile fabrication of 3D honeycomb-like porous GaN photoanode for reliable and sensitive photoelectrochemical detection of glucose

Xiaohan Zhai et al.

Summary: A novel photoelectrochemical glucose sensor was developed using a three-dimensional porous GaN photoanode. Glucose was photooxidized by the GaN photoanode, resulting in increased photocurrents. The sensor exhibited good reproducibility, selectivity, and stability, and was capable of detecting glucose in human serum samples.

JOURNAL OF ALLOYS AND COMPOUNDS (2023)

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Article Materials Science, Multidisciplinary

Pores in p-type GaN by annealing under nitrogen atmosphere: formation and photodetector

Rongrong Chen et al.

Summary: Mg-doped p-GaN was annealed in a N-2 environment to fabricate porous p-GaN for the first time. Pore size and density increased with the rising annealing temperature, and the best crystal quality was obtained at 1050 degrees C. The formation of porous structures was attributed to the decomposition of GaN molecules located at defects in the p-GaN epitaxial film. Porous p-GaN epitaxial wafers exhibited improved carrier mobility, light response speed, surface state density, and visible light transmittance compared to the as-grown sample.

JOURNAL OF MATERIALS SCIENCE (2022)

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Article Chemistry, Physical

Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching

J. L. Weyher et al.

Summary: Surface polarity plays a significant role in the chemical etching of GaN. Prior photoetching can cause the formation of nanocolumns and protrusions, which result in distinctive features depending on the crystal orientation and inhomogeneities presence.

JOURNAL OF PHYSICAL CHEMISTRY C (2022)

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Article Chemistry, Physical

Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching

Hoki Son et al.

Summary: Nanoporous GaN double layer structures with controlled porosity and variation in nanopore size and shape were fabricated using electrochemical etching and photoelectrochemical etching. Increasing the porosity decreased the biaxial stress and reflectance index, while enhancing the photoluminescence intensity of InGaN/GaN multi-quantum wells grown on the nanoporous GaN.

APPLIED SURFACE SCIENCE (2022)

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Article Chemistry, Physical

Quality assessment of GaN epitaxial films: Acidification scenarios based on XPS-and-DFT combined study

D. A. Zatsepin et al.

Summary: X-ray photoelectron spectroscopy (XPS) was used to study the electronic structure and surface states of GaN epitaxial films grown on Al2O3 and SiC substrates. After three years of storage in standard air conditions, only traces of surface oxidation were detected. First-principle modeling showed that GaN surface acidification is favorable in humid conditions, while oxidation process is slower in dry air conditions.

APPLIED SURFACE SCIENCE (2021)

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Article Chemistry, Physical

Fabrication of layer-ordered porous GaN for photocatalytic water splitting

Xiaodong Li et al.

Summary: Ordered nanoporous structures can be achieved through selective electrochemical etching, resulting in a 2.7 times increase in photocurrent for porous GaN compared to planar GaN. The enhanced photocatalytic performance is mainly due to the increased specific surface area and modulation of the electric fields of incident light in the porous structures.

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY (2021)

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Article Nanoscience & Nanotechnology