A novel mild etchant for photoelectrochemical etching of GaN with enhanced photoresponse

A novel mild etchant, i.e., taurine aqueous solution, was used to photoelectrochemical etching of GaN. The pore shape of etched GaN can be regulated via etching time, and the etching process had no influence on the crystal integration and stress property of GaN. The photocurrents of etched GaN were larger than that of as-grown planar GaN, demonstrating its potential for photoelectric fields.

Automated summary

In this study, a novel mild etchant, taurine aqueous solution, was successfully used for photoelectrochemical etching of GaN. The pore shape of etched GaN can be regulated by controlling the etching time. The etching process does not affect the crystal integration and stress property of GaN, and the etched GaN exhibits larger photocurrents compared to as-grown planar GaN, indicating its potential for photoelectric fields.