High-Power III-V/Si Integrated WavelengthTunable Laser for L-Band Applications

We demonstrate a III-V/Si widely wavelength tunable laser covering the entire L-band for the optical communication systems. By carefully designing the silicon ring filter, low threshold current and high output power are expected. Using the standard silicon photonic process, the silicon filter chip is fabricated and compactly packaged with a reflective semiconductor optical amplifier. The low threshold current of 20 mA is achieved at 15 C-degrees, and over 76 mW output power is obtained at 320 mA. The wavelength tuning range from 1565 nm to 1635 nm is realized with the side-mode suppression ratio larger than 50 dB. Furthermore, the intrinsic linewidth narrower than 25 kHz and relative intensity noise below -152 dB/Hz is achieved, which can support the coherent communications.

Automated summary

We present a widely wavelength tunable laser (III-V/Si) that covers the entire L-band for optical communication systems. By optimizing the design of the silicon ring filter, we achieve low threshold current and high output power. We fabricate a silicon filter chip using the standard silicon photonic process and package it compactly with a reflective semiconductor optical amplifier. The experimental results demonstrate a large wavelength tuning range, high side-mode suppression ratio, and potential for coherent communications.