Communication-A (001) beta-Ga2O3 MOSFET with+2.9 V Threshold Voltage and HfO2 Gate Dielectric

An MOS transistor fabricated on (001) beta-Ga2O3 exfoliated from a commercial (-201) beta-Ga2O3 substrate is reported. A maximum drain current of 11.1 mA/mm was measured, and a non-destructive breakdown was reached around 80 V in the off state. Threshold voltage of +2.9 V was extracted at 0.1 V drain bias, and peak transconductance of 0.18 mS/mm was measured at V-DS = 1 V, corresponding to a field effect mobility of 0.17 cm(2)/Vs. Hall effect and electron spin resonance data suggested that electron conductivity was due primarily to O vacancy donors (V-O(+)) with an estimated density of 2.3 x 10(17) (+/- 50%) cm(-3). (C) The Author(s) 2016. Published by ECS. All rights reserved.