Electrical Characteristics of Vertical Ni/β- Ga2O3 Schottky Barrier Diodes at High Temperatures

Vertical geometry beta-Ga2O3 Schottky barrier diodes (SBDs) were fabricated and the rectifying forward and reverse current-voltage characteristics were demonstrated at elevated temperatures for a freestanding beta-Ga2O3 material with an ultra-wide bandgap of similar to 4.9 eV. The breakdown voltage of the fabricated beta-Ga2O3 SBDs with a punch-through configuration was similar to 210 V without the edge-termination method. The electrical field and potential distributions were numerically simulated with a finite element method. The on-resistance was 2582 Omega center dot cm(2) at 25 degrees C, and decreased to 0.043 Omega center dot cm(2) at 225 degrees C. The figure-of-merit ( V-BR (2)/ R-on) was approximately 17.1W center dot cm(-2). The temperature-dependent Schottky barrier height and ideality factor were also determined. The developed beta-Ga2O3 SBDs with the punch-through structure exhibit great potential for high power and high temperature applications. (C) 2016 The Electrochemical Society All rights reserved.