期刊
IEEE ACCESS
卷 11, 期 -, 页码 116472-116479出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2023.3325236
关键词
MOSFET; Capacitance; Resistance; Power dissipation; Voltage; Switches; Logic gates; Channel estimation; Loss measurement; Power system measurements; SPICE; Channel width; conduction losses; power loss; power MOSFET; switching losses; SPICE MOSFET parameters
This study investigates the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply and proposes a circuit-specific criterion for selecting a MOSFET with minimal power dissipation. Simulation-based analysis demonstrates the effect of channel width on power dissipation and illustrates the advantage of the newly proposed method over the published method.
We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the ratio between on resistance and output capacitance of the MOSFET and is independent of its technological parameters. The effect of channel width on the power dissipation is illustrated by simulation-based analysis, which also provide an example of a published non-optimum selection of a power MOSFET and demonstrate the advantage of the newly proposed method for MOSFET selection.
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