4.5 Article

Synthesis and elucidation of structural, optical, vibrational and magnetic properties of Mn-doped V2O5 dilute magnetic semiconductor nanocrystals

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PHYSICA B-CONDENSED MATTER
卷 670, 期 -, 页码 -

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ELSEVIER
DOI: 10.1016/j.physb.2023.415346

关键词

Nanocrystalline materials; Dilute magnetic semiconductors; Optical properties; Williamson-Hall method; Elastic properties

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Undoped and Mn-doped V2O5 nanocrystals were synthesized and characterized. Mn doping increased the crystallite size and decreased lattice strain, stress, and energy density. The vibrational properties were affected by Mn ions and photoluminescence indicated the presence of defects. Undoped nanocrystals showed weak ferromagnetic behavior at room temperature, which was significantly enhanced after Mn doping. Mn-doped V2O5 nanocrystals are promising for spintronics applications.
Undoped and Mn-doped (5% and 10%) V2O5 nanocrystals have been synthesized by the chemical coprecipitation process followed by heating of the chemically obtained materials at 600 degrees C. X-ray diffractometry, transmission electron microscopy, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, UV-visible absorption spectroscopy, photoluminescence spectroscopy, vibrating sample magnetometry and electron spin resonance spectroscopy have been used for material characterization. Williamson-Hall analyses revealed higher crystallite size but lower lattice strain, lattice stress and energy density of the Mn-doped V2O5 nanocrystals as compared to undoped ones. The vibrational properties were found to be influenced by the presence of Mn ions while photoluminescence results suggested the presence of vanadium vacancy and vanadium interstitial defects in the nanocrystals. The undoped V2O5 nanocrystals exhibited weak room-temperature ferromagnetic behaviour that got significantly stronger after Mn doping. The dilute magnetic semiconductor Mn-doped V2O5 nanocrystals are promising materials for applications in spintronics devices.

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