Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser

The transient photocurrent is one of the key parameters of the spatial radiation effect of photoelectric devices, and the energy level defect affects the transient photocurrent. In this paper, by studying the deep level transient spectrum of a self-designed Schottky diode, the defect properties of the interface region of the anode metal AlCu and Si caused by high-temperature annealing at 150., 200. and 300. for 1200 h have been quantitatively analyzed. The study shows that the defect is located at the position of + 0.41 eV on the valence band, the concentration is 2.8 x1013/ cm2, and the capture cross section is similar to = 8.5 x1017. The impurity energy level mainly comes from the diffusion of Al atom in anode metal. We found that the defect did not cause the electrical performance degradation and obvious morphology change of the device, but the transient photocurrent increased significantly. The reason is that the high temperature treatment results in a growth in the density of states at the interface between AlCu-Si. The more mismatched dislocations and recombination center increased the reverse current of the heterojunction. The above view is proved by the TCAD simulation test.

Automated summary

This study quantitatively analyzed the defect properties of the AlCu-Si interface after high-temperature annealing by studying the deep level transient spectrum. It was found that the defect is located at +0.41eV on the valence band, with a concentration of 2.8 x10^13/cm^2 and a capture cross section similar to 8.5 x10^17. High-temperature treatment increased the density of states at the AlCu-Si interface, resulting in an increased reverse current of the heterojunction.