Antiferromagnetic Films and Their Applications

Spintronic devices are expected to replace the recent nanoelectronic memories and sensors due to their efficiency in energy consumption and functionality with scalability. To date, spintronic devices, namely magnetoresistive junctions, employ ferromagnetic materials by storing information bits as their magnetization directions. However, in order to achieve further miniaturization with maintaining and/or improving their efficiency and functionality, new materials development is required: 1) increase in spin polarization of a ferromagnet or 2) replacement of a ferromagnet by an antiferromagnet. Antiferromagnetic materials have been used to induce an exchange bias to the neighboring ferromagnet but they have recently been found to demonstrate a 100% spin-polarized electrical current, up to THz oscillation and topological effects. In this review, the recent development of three types of antiferromagnets is summarized with offering their future perspectives towards device applications.

Automated summary

Spintronic devices show promise in replacing nanoelectronic memories and sensors due to their efficiency and scalability. To achieve further miniaturization, new materials development is necessary, such as increasing spin polarization or using antiferromagnets. Recent studies have found interesting properties in antiferromagnetic materials, such as 100% spin-polarized current and topological effects. This review summarizes the recent development of three types of antiferromagnets and discusses their potential for device applications.