Magnetic field induced activated and quantum creep of charge density waves in o-TaS3

We demonstrate that magnetoresistance of creeping charge-density waves in the quasi-one-dimensional conductor o-TaS3 changes its character from a negative parabolic at T greater than or similar to 10 K, where it obeys the 1/T-2 law to a weakly temperature-dependent negative nearly linear one at lower temperatures. The dominant contribution into the negative parabolic magnetoresistance comes from magnetic field induced splitting of the CDW order parameter. The linear magnetoresistance arises due to CDW quantum interference, similar to the scenario of negative linear magnetoresistance in single-electron systems.

Automated summary

This study demonstrates that the magnetoresistance of creeping charge-density waves in o-TaS3 changes its nature with temperature, showing a negative parabolic character at high temperatures and a weakly temperature-dependent negative linear relationship at low temperatures. The dominant contribution to the negative parabolic magnetoresistance is induced by the magnetic field splitting of the CDW order parameter. The linear magnetoresistance is caused by CDW quantum interference, resembling the scenario in single-electron systems.