Domain boundaries and growth manner of a-plane ZnO film on symmetric (001)LaAlO3 substrate

Non-polar a-plane ZnO film grown on (00 1)LaAlO3 (LAO) substrate has been systematically characterized by employing transmission electron microscope. On (00 1)LAO substrate, a-plane ZnO film comprises two main orientation types of domains perpendicular to each other. In one orientation type of a-plane ZnO domains, stacking mismatch boundary (SMB) and inversion domain boundary (IDB) form in the coalescence of two domain islands parallel to each other. SMB is composed of m-and r-planes. IDB extends along m-plane. The in-plane growth of a-plane ZnO domains extends along the direction with-45 degrees -rotation to [0 0 01]ZnO. The bound-aries of two perpendicular a-plane ZnO domains consist of 45 degrees -boundaries and r-plane twin boundaries. The profile of a-plane ZnO domain appears as L-shape.

Automated summary

A non-polar a-plane ZnO film grown on (001)LaAlO3 (LAO) substrate was characterized, revealing two perpendicular grain domains. The coalescence of grain islands in one domain type results in the formation of stacking mismatch boundaries (SMB) and inversion domain boundaries (IDB).