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Article
Engineering, Electrical & Electronic
Sean R. C. McMitchell et al.
Summary: Ferroelectricity was achieved in 15 nm thick Al1-xScxN films for the first time through materials and interfacial engineering. Bottom electrodes were optimized through modification of strain state and texture in the films, with Pt bottom interfaces showing the widest doping window and lowest leakage. Mo bottom interfaces promoted mixed texture, leading to reduced breakdown E-field and doping window. Top electrode stacks were found to modify strain state and leakage, enabling full interfacial engineering. Mo top electrode interfaces reduced the coercive electric field, allowing strain engineering and application in memory devices.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Masato Uehara et al.
Summary: The ferroelectricity of wurtzite ScxGa1-xN was demonstrated, with high remanent polarization and adjustable coercive field. The concentration of Sc governed the coercive field in ScxGa1-xN and ScxAl1-xN, suggesting the polarization switching started in wurtzite unit cells containing Sc.
APPLIED PHYSICS EXPRESS
(2022)
Article
Engineering, Electrical & Electronic
Shinnosuke Yasuoka et al.
Summary: The effect of pure mechanical strain on the ferroelectric properties of (Al0.8Sc0.2)N films deposited on different thermal expansion coefficient substrates was investigated. It was found that the mechanical lattice strains could be controlled by using substrates with different thermal expansion coefficients. The changes in remanent polarization and coercive field values could be understood by crystal anisotropy.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Ceramics
Kota Hasegawa et al.
Summary: The density functional theory (DFT) was used to understand the ferroelectric behaviors of wurtzite-type aluminum nitride (AlN). It was found that lattice deformation can reduce the coercive field, and the transitional non-polar phase plays a crucial role in polarity switching.
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
(2022)
Article
Physics, Applied
Masato Uehara et al.
Summary: Wurtzite aluminum nitride has been found to exhibit ferroelectricity when alloyed with scandium, attracting attention due to its large remanent polarization (P-r). Similar properties are expected for gallium nitride with a similar structure. Sc0.41Ga0.59N prepared on a silicon substrate using sputtering showed ferroelectricity with a P-r value of around 120 mu C/cm(2), comparable to ScxAl1-xN. Temperature dependence of coercive field (E-c) was observed in the positive-up-negative-down (PUND) measurement, decreasing from 4.3 MV/cm at 300 K to 3.2 MV/cm at 473 K.
APPLIED PHYSICS LETTERS
(2021)
Article
Nanoscience & Nanotechnology
Yiwen Song et al.
Summary: RF MEMS based on Al1-xScxN are being favored over AlN-based devices for their higher achievable bandwidths suitable for 5G networks. However, overheating of Al1-xScxN FBARs limits power handling, and reducing abnormally oriented grain density improves thermal performance of the devices.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Applied
Keisuke Yazawa et al.
Summary: The study shows that the coercive field of epitaxial ferroelectric wurtzite films can be reduced through epitaxial mismatch strain. These results demonstrate that altering the crystal structure parameters can lower the coercive field of ferroelectric films.
APPLIED PHYSICS LETTERS
(2021)
Article
Materials Science, Multidisciplinary
John Hayden et al.
Summary: This manuscript demonstrates the ferroelectricity in B-substituted AlN thin films and the relationship between structure and properties through first-principles calculations. Experimental results show that films with B concentrations ranging from 0.02 to 0.15 exhibit ferroelectric switching behavior, while degradation of ferroelectric behavior occurs when B concentrations exceed 0.15.
PHYSICAL REVIEW MATERIALS
(2021)
Article
Physics, Applied
Wanlin Zhu et al.
Summary: This study reveals the temperature dependence of ferroelectric switching in Al0.84Sc0.16N, Al0.93B0.07N, and AlN thin films, showing strong temperature dependence on polarization reversal and coercive field, while minimal temperature dependence on remanent polarization values. The relative permittivity increased within a certain temperature range, and polarization reversal was confirmed through piezoelectric coefficient analysis and chemical etching. Models based on thermal activation suggest a distribution of pinning sites or nucleation barriers regulates the switching behavior with an average activation energy near 28 meV.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Ping Wang et al.
Summary: Ferroelectricity has been successfully demonstrated in ScxAl1-xN epitaxial films grown on GaN templates by molecular beam epitaxy, showing distinct polarization switching and excellent properties, such as a high coercive field and long polarization retention time. This achievement opens up possibilities for integrating high-performance ferroelectric functionality into established semiconductor platforms for various electronic and photonic device applications.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Ding Wang et al.
Summary: Single-phase wurtzite ScGaN grown on GaN by plasma-assisted molecular beam epitaxy exhibits distinct ferroelectric properties, with tunable coercive fields and large retainable remnant polarization. Leveraging the widely tunable energy bandgap of III-nitride semiconductors, the demonstration of ferroelectricity in ScGaN will enable a broad range of emerging applications in ferroelectric, electronic, optoelectronic, photovoltaic, and/or photonic devices and systems.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
Koga Furuta et al.
Summary: This study systematically investigates the effect of scandium concentration on spontaneous polarization in ScxAl1-xN using first-principles calculations. It is found that a structural transition from a c-axis polarized wurtzite structure to a nonpolarized layered hexagonal structure occurs at x = 0.67, leading to a nonlinear decrease in spontaneous polarization. Additionally, the comparison of spontaneous polarizations from different cations reveals a higher value for aluminum-nitrogen (Al-N) compared to scandium-nitrogen (Sc-N) due to differences in internal parameters along the c axis in the layered hexagonal structure.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Kevin Ferri et al.
Summary: Ferroelectricity is demonstrated in Mg-substituted ZnO thin films with wurtzite structure, grown by dual-cathode reactive magnetron sputtering on specific substrates. Increasing Mg content leads to both a decrease in c-lattice parameter and an increase in a-lattice parameter, maintaining a nearly constant c/a axial ratio. The films display ferroelectric switching properties with high remanent polarizations and low coercive fields within a specific range of Mg content.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Aravind Krishnamoorthy et al.
Summary: Scandium-doped aluminum nitride, Al1-x Sc (x) N, is a new class of displacive ferroelectric materials with high polarization and sharp hysteresis. The transition mechanism from unswitchable to switchable ferroelectrics relies on important atomic properties such as local structure and dopant distribution. Computational synthesis and characterization of Al1-x Sc (x) N reveal the impact of inhomogeneous scandium distribution on polarization reversal mechanisms.
Article
Physics, Applied
Shinnosuke Yasuoka et al.
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Physics, Applied
Simon Fichtner et al.
JOURNAL OF APPLIED PHYSICS
(2019)
Article
Chemistry, Multidisciplinary
Ying Zhang et al.
Article
Physics, Applied
Ayako Konishi et al.
APPLIED PHYSICS LETTERS
(2016)
Article
Physics, Applied
Hiroki Moriwake et al.
APPLIED PHYSICS LETTERS
(2014)
Article
Physics, Applied
Wei Li et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2011)
Article
Chemistry, Multidisciplinary
Morito Akiyama et al.
ADVANCED MATERIALS
(2009)
Article
Physics, Applied
Hiroshi Naganuma et al.
APPLIED PHYSICS EXPRESS
(2008)
Article
Physics, Applied
Z. Q. Yao et al.
APPLIED PHYSICS LETTERS
(2008)