Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition

We propose an analytical approach for calculating the time-to-breakdown of metal-oxide-semiconductor (MOS) systems under different stress conditions. Our method relies solely on fresh I-g V-g measurements, making it easy to implement. Building on the percolation model and incorporating experimental trends from the literature, we accurately determine the voltage, gate oxide thickness, and temperature dependencies of time-to-breakdown. These calculated values are compared to experimental data under various operating conditions, allowing for a comprehensive assessment. Consequently, we introduce a time-to-breakdown map in the {Temperature-Voltage} space for immediate identification of the maximum stress condition for any target lifetime.

Automated summary

An analytical approach for calculating the time-to-breakdown of metal-oxide-semiconductor (MOS) systems under different stress conditions is proposed. This method relies solely on fresh I-g V-g measurements and accurately determines the voltage, gate oxide thickness, and temperature dependencies of time-to-breakdown. By comparing these calculated values with experimental data, a comprehensive assessment of the system's performance under various operating conditions can be made. The introduced time-to-breakdown map in the {Temperature-Voltage} space allows for immediate identification of the maximum stress condition for any target lifetime.