Tri-gate junctionless transistors with electrostatically highly doped channel

Review Engineering, Electrical & Electronic

Reconfigurable field effect transistors: A technology enablers perspective

T. Mikolajick et al.

Summary: With the traditional scaling of CMOS transistors no longer effective, there is a growing demand for new ways to increase the functionality of integrated circuits without increasing their size. Reconfigurable transistors that can switch between different configurations have emerged as an important solution. This article provides a review of the basic classification of reconfigurable field effect transistors, examines the important technology enablers for constructing such devices, and discusses the historical development and current status of the field. The potential applications of reconfigurable transistors, particularly in hardware security and neuromorphic computing, are also discussed.

SOLID-STATE ELECTRONICS (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors

Dae-Young Jeon

Summary: The gate-all-around (GAA) nanosheet junctionless transistor (JLT) was investigated for its channel width-dependent transconductance degradation and threshold voltage shift. It was found that a pronounced surface accumulation channel limited the electrical characteristics of GAA NS JLTs at narrow widths, with smaller V-th variation compared to tri-gate JLTs. Quantum mechanical effects in GAA NS JLTs with very narrow widths were also studied.

AIP ADVANCES (2021)

添加到收藏夹

Article Materials Science, Multidisciplinary