Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride

We investigate the feasibility of the epitaxial growth of a three-dimensional semiconductor on a two-dimensional substrate. In particular, we report for the first time the molecular beam epitaxy growth of cadmium telluride (CdTe) quantum wells on hexagonal boron nitride (hBN). The presence of the quantum wells is confirmed by photoluminescence measurements conducted at helium temperatures. Growth of the quantum wells on two-dimensional, almost perfectly flat hBN appears to be very different from growth on bulk substrates; in particular, it requires 70-100 degrees C lower temperatures.

Automated summary

We investigated the possibility of growing a three-dimensional semiconductor on a two-dimensional substrate, and successfully reported for the first time the growth of CdTe quantum wells on hBN using molecular beam epitaxy. The presence of the quantum wells was confirmed through photoluminescence measurements, and it was found that growth on the nearly flat hBN substrate was significantly different from growth on bulk substrates, requiring much lower temperatures.